| PART |
Description |
Maker |
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
| IRF7458 IRF7458TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)
|
IRF[International Rectifier]
|
| FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes
40V N-Channel FLMP PowerTrench MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMC6G10US60 |
IGBT
Compact & Complex Module
Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
Fairchild Semiconductor Corporation
|
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707 |
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?
|
IRF[International Rectifier]
|
| DTB723YE DTB723YE09 DTB723YM |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB713ZM DTB713ZE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
http://
ROHM[Rohm]
|
| DTD743XE11 DTD743XM |
200mA / 30V Low VCE (sat) Digital transistors(with built-in resistors)
|
Rohm
|
